Email: klganapathi@iitm.ac.in

Tel (O): +91 44 2257 4839

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Dr. Kolla Lakshmi Ganapathi
DST INSPIRE Faculty, IIT Madras

Publications

  1. L. Devendar, M. R. Shijeesh, T. Sakorikar, K. L. Ganapathi*, and M. Jaiswal*, “Intercalated water mediated electromechanical response of graphene oxide films on flexible substrates”, Journal of Physics: Condensed Matter, 34(2), 025001 (2021). (*Corresponding author). https://doi.org/10.1088/1361-648X/ac2ad0; ISSN: 1361-648X; Impact factor: 2.8

  2. MA Jithin, K. L. Ganapathi, M Ambresh, Pavan Nukala, NK Udayashankar, S Mohan, “Development of titanium nitride thin film microheaters using laser micromachining”, Vacuum, 110795 (2021)—In press

  3. K. L. Ganapathi*, N. Bhat and S. Mohan, “Optimization and integration of ultrathin e-beam grown HfO2 gate dielectrics in MoS2 transistors” Journal of Physics D: Applied Physics, 54 (44), 445302 (2021); (*Corresponding author) https://doi.org/10.1088/1361-6463/ac19e0; ISSN: 1361-6463; Impact factor: 3.2.

  4. S. Sooraj*, K. L. Ganapathi*, V. Eswaraiah, N.Bhat, “Performance Tunability of Field-Effect Transistors using MoS2(1-x) Se2x Alloys”, Nanotechnology, 32(43), 435202 (2021) (*Authors Equally Contributed). https://doi.org/10.1088/1361-6528/ac1717; ISSN: 1361-6528; Impact factor: 3.87.

  5. N. Ramashanker, K. L. Ganapathi, N. Varun, M. S. Bhat, S. Mohan, “Development of CeO2-HfO2 mixed oxide thin films for high performance oxygen sensors”, IEEE Sensors Journal, 21(16), 18326-18333 (2021). https://doi.org/10.1109/JSEN.2021.3085857; ISSN: 1530-437X; Impact factor: 3.1.

  6. T. Dixit, J. Agrawal, K. L. Ganapathi, M. S. R. Rao, V. Singh, “Ultra-Wide Bandgap CuO: High-Performance Solar-Blind Photo-detection”, IEEE Electron Device Lett., 41 (12), 1790-1793(2020). https://doi.org/10.1109/LED.2020.3030641; ISSN: 1558-0563; Impact factor: 4.18; (Cover page).

  7. T. Dixit, J. Agrawal, K. L. Ganapathi, M. S. R. Rao, V. Singh, “Long lasting persistent photoconductivity in Au/CuO thin films for optical memory”, IEEE Photonics Technology letters, 32(6), 329-332 (2020). https://doi.org/10.1109/LPT.2020.2973725; ISSN: 1941-0174; Impact factor: 2.86.

  8. A. Arora, P.K. Nayak, T. Dixit, K. L. Ganapathi, A. Krishnan, M.S. R. Rao, “Stacking angle dependent multiple excitonic resonances in bilayer Wse2”, Nanophotonics, 9(12), 3881–3887 (2020). https://doi.org/10.1515/nanoph-2020-0034; ISSN: 2192-8614; Impact factor: 8.5.

  9. A. Saroha, T. Dixit, K. L. Ganapathi, M. Muralidhar, M. Murakami, M. S. R. Rao, “Nanoscale Probing of Magnetic and Electrical Properties of YIG/Si(100) Thin Films Grown by Pulsed Laser Deposition", IEEE Magn. Lett., 11, 7102305 (2020). https://doi.org/10.1109/LMAG.2020.2985338; ISSN: 1949-3088; Impact factor: 1.24.

  10. K. L. Ganapathi, Martando Rath, MS Ramachandra Rao, “Polarization induced switching in PZT back gated multilayer MoS2 FETs for low power non-volatile memory”, Semicond. Sci. Technol. 34 (5), 055016 (2019). https://doi.org/10.1088/1361-6641/aaf9e6; ISSN: 1361-6641; Impact factor: 2.65.

  11. S. Sarkar, A.bid, K. L. Ganapathi and S. Mohan, “Probing defect states in few-layer MoS2 by conductance fluctuation spectroscopy”, Phys. Rev. B, 99 (24), 245419 (2019)— Editor’s suggestion, https://doi.org/10.1103/PhysRevB.99.245419; ISSN: 2469-9969; Impact factor: 4.03.

  12. T. Dixit, A. Arora, M. Muralidhar M. Murakami, Pramoda K. Nayak, K. L. Ganapathi, M.S. Ramachandra Rao, “Plasmon Assisted Selective Enhancement of Direct Band Transitions in Multi-layer MoS2”, IEEE Photonics Journal, 11(5), 4501106 (2019). https://doi.org/10.1109/JPHOT.2019.2935000; ISSN: 1943-0655; Impact factor: 2.76.

  13. T. Dixit, J. Agrawal, M. Muralidhar, M. Murakami, K. L. Ganapathi, V. Singh, M. S. R. Rao, “Exciton Lasing in ZnO-ZnCr2O4 Nanowalls”, IEEE Photonics Journal, 11(6), 4501307(2019). https://doi.org/10.1109/JPHOT.2019.2945010; ISSN: 1943-0655; Impact factor: 2.76.

  14. N. Ramashanker, K. L. Ganapathi, M. S. Bhat, S. Mohan, “RF sputtered CeO2 thin films based oxygen sensors”, IEEE Sensors Journal, 11 (22), 10821-10828 (2019). https://doi.org/10.1109/JSEN.2019.2931766; ISSN: 1530-437X; Impact factor: 3.1.

  15. A. Arora, T. Dixit, K.V.A. Kumar, S. Krishnan, K. L. Ganapathi, A. Krishnan, P.K. Nayak, M.S.R. Rao, “Plasmon induced brightening of dark exciton in monolayer WSe2 for quantum optoelectronics”, Appl. Phys. Lett., 114 (20), 201101 (2019). https://doi.org/10.1063/1.5093664; ISSN: 1077-3118; Impact factor: 3.79.

  16. T. Dixit, J. Agrawal, K. L. Ganapathi, V. Singh, M. S. R. Rao, “High-Performance Broadband Photo-detection in Solution-Processed ZnO-ZnCr2O4 Nanowalls”, IEEE Electron Device Lett., 40 (7), 1143-1146 (2019). https://doi.org/10.1109/LED.2019.2916628; ISSN: 1558-0563; Impact factor: 4.02.

  17. T. Dixit, J. Agrawal, S. V. Solanke, K. L. Ganapathi, M. S. R. Rao and V. Singh, “ZnO/Au/ZnO Configuration for High Performance Multi-band UV Photo-detection”, IEEE Sensors Lett., 3 (9), 3501604 (2019). https://doi.org/10.1109/LSENS.2019.2940764; ISSN: 2475-1472; Impact factor: NA.

  18. S. Bhattacharjee, R.Vatsyayan, K. L. Ganapathi, P. Ravindra, S. Mohan, N. Bhat, “Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2”, Advanced Electron. Mater., 5(6), 1800863, (2019). https://doi.org/10.1002/aelm.201800863; ISSN: 2199-160X; Impact factor: 7.3.

  19. S. Bhattacharjee, K. L. Ganapathi, D. G. Sharma, A. Sharma, S. Mohan, N. Bhat, “Adaptive Transport in High Performance (Ion), Steep Sub-Threshold Slope (SS < 60 mV/dec) MoS2 Transistors”, IEEE Transactions on Nanotechnology, 18, 1071-1078 (2019). https://doi.org/10.1109/TNANO.2019.2946449; ISSN: 1536-125X; Impact factor: 2.85.

  20. P. R. Y. Gangavarapu, Anjanashree M.R.S, K. L. Ganapathi, S. Mohan, AK Naik, “Dielectric based charge carrier tuning for CNT CMOS inverters”, Semicond. Sci. Technol., 34 (1), 015015 (2018). https://doi.org/10.1088/1361-6641/aaf17d; ISSN: 1361-6641; Impact factor: 2.36.

  21. T. Dixit, A. Arora, A. Krishnan, *K. L. Ganapathi, P.K. Nayak, MSR. Rao, “Near Infrared Random Lasing in Multilayer MoS2”, ACS Omega., 3 (10), 14097-14102 (2018) (*Corresponding author). https://doi.org/10.1021/acsomega.8b01287; ISSN: 2470-1343; Impact factor: 3.52.

  22. T. Dixit, J. Agrawal, K. L. Ganapathi, V. Singh, M. S. R. Rao,” Solution-Processed Transparent CuO Thin Films for Solar-Blind Photodetection”, IEEE Electron Device Lett., 40(2), 255-258 (2018). (Cover page). https://doi.org/10.1109/LED.2018.2886928; ISSN: 1558-0563; Impact factor: 4.18.

  23. K. L. Ganapathi, Y. Ding, D. Misra, N. Bhat, “Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks”, J. Vac. Sci. Technol., B, 36 (2), 021201 (2018). https://doi.org/10.1116/1.5006789; ISSN: 2166-2754; Impact factor: 1.51.

  24. MA Jithin, K. L. Ganapathi, GNVR Vikram, NK Udayashankar, S Mohan, "Pulsed DC magnetron sputtered titanium nitride thin films for localized heating applications in MEMS devices", Sensors and Actuators-A: Physical, 272, 199-205 (2018). https://doi.org/10.1016/j.sna.2017.12.066; ISSN: 0924-4247; Impact factor: 2.90.

  25. H. Chandrasekar, S. Kumar, K. L. Ganapathi, S. Prabhu, S.B. Dolmanan, S. Tripathy, S. Raghavan, KN Bhat, S. Mohan, R. Muralidharan, N. Bhat, Digbijoy N Nath, “Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates”, IEEE Trans. Electron Devices, 65 (9), 3711-3718 (2018). https://doi.org/10.1109/TED.2018.2856773; ISSN:1557-9646; Impact factor: 2.97.

  26. S. Bhattacharjee, K. L. Ganapathi, S. Mohan and N. Bhat, “A sub-thermionic MoS2 FET with tunable transport," Appl. Phys. Lett., 111(16), 163501 (2017) (Editor’s pick). https://doi.org/10.1063/1.4996953; ISSN: 1077-3118; Impact factor: 3.8;.

  27. S. Bhattacharjee, K. L. Ganapathi, H. Chandrasekar, T. Paul, S. Mohan, A. Ghosh, S. Raghavan, N. Bhat, “Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High Performance Multilayer MoS2 FETs”, Adv. Electron. Mater., 3 (1), 1600358, (2017). https://doi.org/10.1002/aelm.201600358; ISSN: 2199-160X; Impact factor:7.3.

  28. A. Suresh, K. L. Ganapathi and S. Uthanna, "Electrical, optical, structural and chemical properties of Al2TiO5 films for high- gate dielectric applications," Materials Science in Semiconductor Processing, 57, 137-146 (2017). https://doi.org/10.1016/j.mssp.2016.10.019; ISSN: 1369-8001; Impact factor: 3.92.

  29. K. L. Ganapathi, S. Bhattacharjee, S. Mohan and N. Bhat, “High-performance HfO2 back gated multilayer MoS2 transistors", IEEE Electron Device Lett., 37 (6), 797-800 (2016). https://doi.org/10.1109/LED.2016.2553059; ISSN: 1558-0563; Impact factor:4.18.

  30. S. Bhattacharjee, *K. L. Ganapathi, D. N. Nath and N. Bhat, “Surface States Engineering of metal/MoS2 contacts using Sulfur Treatment for Reduced Contact Resistance and Variability", IEEE Trans. Electron Devices, 63(6), 2556-2562 (2016). (* Authors Equally Contributed). https://doi.org/10.1109/TED.2016.2554149; ISSN:1557-9646; Impact factor:2.97.

  31. S. Bhattacharjee, K. L. Ganapathi, D. N. Nath and N. Bhat, “Intrinsic limit for Contact Resistance in exfoliated multilayered MoS2 FET", IEEE Electron Device Lett., 37, 119122 (2015). https://doi.org/10.1109/LED.2015.2501323; ISSN: 1558-0563; Impact factor:4.18.

  32. H. Chandrasekhar, K. L. Ganapathi, S. Bhattacharjee, N. Bhat and D.N. Nath, “Optical Phonon limited high field transport in layered materials” IEEE Trans. Electron Devices, 63 (2), 767-772 (2015). https://doi.org/10.1109/TED.2015.2508036; ISSN:1557-9646; Impact factor:2.97.

  33. K. L. Ganapathi, N. Bhat, and S. Mohan, “Influence of O2 flow rate on HfO2 gate dielectrics for back gated graphene transistors", Semicond. Sci. Technol., 29, 055007 (2014). https://doi.org/10.1088/0268-1242/29/5/055007; ISSN: 1361-6641; Impact factor:2.36.

  34. K. L. Ganapathi, N. Bhat, and S. Mohan, “Optimization of HfO2 films for high transconductance back gated graphene transistors", Appl. Phys. Lett., 103, 073105 (2013). https://doi.org/10.1063/1.4818467; ISSN: 1077-3118; Impact factor:3.8.